Deep Silicon Amorphization Induced by Femtosecond Laser Pulses up to the Mid?Infrared
نویسندگان
چکیده
Direct laser writing of amorphous lines in crystalline silicon has the potential for becoming a flexible alternative to silicon-on-insulator technology photonic integrated circuits. Yet, maximum layer thickness achieved is 60 nm, which below requirements waveguiding at telecom wavelengths. Here, authors report on different strategies push beyond today's limit. To this end, irradiation with femtosecond pulses covering an extremely broad wavelength range (515 nm–4 µm) up yet unexplored near- and mid-infrared region transparency investigated. The results show that much thicker layers can be obtained upon multipulse 3-µm wavelength. deepest amorphization wafers covered thick dioxide strongly assists heat extraction, yielding steep index profiles 128 nm. This superior compatible single mode symmetric waveguide configuration. study also contributes better understanding mechanisms involved laser-induced amorphization.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2021
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202100400